 |
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
|
| If you can't view the Datasheet, Please click here to try to view without PDF Reader . |
|
|
| Datasheet File OCR Text: |
| DTDG14GP Transistors Digital transistor (built in resistor and zener diode) Driver (60V, 1A) DTDG14GP !Features 1) High hFE. (typ. hFE =750 VCE/IC=2V/0.5A) 2) Low saturation voltage, VCE(sat)=0.4V (IC/IB=500mA/5mA) 3) Built-in zener diode to protect the transistor against reverse voltages when connected to alow load. !External dimensions (Units : mm) 0.50.1 4.5+0.2 -0.1 1.60.1 1.5 +0.2 -0.1 4.00.3 2.5+0.2 -0.1 (1) (2) (3) 0.40.1 1.50.1 1.00.2 0.4+0.1 -0.05 0.40.1 1.50.1 0.50.1 3.00.2 !Structure NPN digital transistor (with single built resistor and zener diode) ROHM : MPT3 EIAJ : SC-62 Abbreviated symbol : E01 (1) Base (2) Collector (3) Emitter !Absolute maximum ratings (Ta = 25C) Parameter Collector-base voltage Collector-emitter voltage Emitter-base voltage Collector current Symbol VCBO VCEO VEBO IC ICP PC Tj Tstg Limits 6010 6010 5 1 2 0.5 2 150 -55~+150 Unit V V V A A(Pulse) W 1 !Equivalent circuit (2) (1) R (3) R=10k Collector power dissipation Junction temperature Storage temperature 2 (1) : Base (2) : Collector (3) : Emitter C C 1 Pw10ms, Duty cycle1/2 2 When mounted on a 40x40x0.7 mm ceramic board. DTDG14GP Transistors !Electrical characteristics (Ta = 25C) Parameter Collector-base breakdown voltage Collector-emitter breakdown voltage Emitter-base breakdown voltage Collector cutoff current Emitter cutoff current Collector-emitter saturation voltage DC current transfer ratio Emitter-base resistance Transition frequency Transition frequency of the device Symbol BVCBO BVCEO BVEBO ICBO IEBO VCE(sat) hFE R fT Min. 50 50 5 - 300 - 300 7 - Typ. - - - - - - - 10 80 Max. 70 70 - 0.5 580 0.4 - 13 - Unit V V V A A V - k MHz IC=50A IC=1mA IE=720A VCB=40V VEB=4V Conditions IC/IB=500mA/5mA VCE=2V, IC=500mA - VCE=5V, IE=-0.1A, f=30MHz !Packaging specifications Package Packaging type Code Part No. DTDG14GP Basic ordering unit (pieces) MPT3 Taping T100 1000 !Electrical characteristic curves 10 5 10k COLLECTOR SATURATION VOLTAGE : VCE(sat) (V) Ta=25C 10 5 2 1 Ta=25C COLLECTOR CURRENT : IC (A) 2 1 500m 200m 100m 50m 20m ICP 5k PW DC =1 PW =1 0 00 m s DC CURRENT GAIN : hFE 2k 1k 500 200 100 50 20 m s 500m 200m 100m 50m 20m 10m 10m 20m 50m 100m 200m 500m 1 2 5 10 VCE=5V 2V 1V IC/IB=200 100 50 10m 5m 14Wx18lx0.8t(Units : mm) When mounted on glass epoxy 2m Single pulse 1m 100m 200m 500m 1 2 5 10 20 50 100 10 10m 20m 50m 100m200m500m 1 2 5 10 COLLECTOR TO EMITTER VOLTAGE : VCE (V) COLLECTOR CURRENT : IC (A) COLLECTOR CURRENT : IC (A) Fig.1 Safe operating area Fig.2 DC current gain vs. collector current Fig.3 Collector-emitter saturation voltage vs. collector current |
Price & Availability of DTDG14
 |
|
|
|
|
All Rights Reserved © IC-ON-LINE 2003 - 2022 |
| [Add Bookmark] [Contact Us] [Link exchange] [Privacy policy] |
|
Mirror Sites : [www.datasheet.hk]
[www.maxim4u.com] [www.ic-on-line.cn]
[www.ic-on-line.com] [www.ic-on-line.net]
[www.alldatasheet.com.cn]
[www.gdcy.com]
[www.gdcy.net] |